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 1N5711 and 1N6263
Schottky Diodes
DO-204AH (DO-35 Glass)
Features
* For general purpose applications * Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. * This diode is also available in the MiniMELF case with type designation LL5711 and LL6263.
Dimensions in inches and (millimeters)
Mechanical Data
Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: D7/10K per 13" reel (52mm tape), 20K/box D8/10K per Ammo tape (52mm tape), 20K/box
Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified.
Parameter Peak Inverse Voltage Power Dissipation (Infinite Heatsink) Maximum Single Cycle Surge 10 s Square Wave Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range 1N5711 1N6263 Symbol VRRM Ptot IFSM RJA Tj TS Value 70 60 400(1) 2.0 0.3
(1) (1) (1)
Unit V mW A C/mW C C
125
-55 to +150
Electrical Characteristics (TJ = 25C unless otherwise noted)
Parameter Reverse Breakdown Voltage Leakage Current Forward Voltage Drop Junction Capacitance Reverse Recovery Time 1N5711 1N6263 Symbol V(BR)R IR VF Ctot trr Test Condition IR = 10A VR = 50V IF = 1mA IF = 15mA VR = 0V, f = 1MHz IF = IR = 5mA, recover to 0.1IR Min 70 60 -- -- -- -- -- Typ -- -- -- -- -- -- -- Max -- -- 200 0.41 1.0 2.2 1 Unit V nA V pF ns
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
10/6/00
1N5711 and 1N6263
Schottky Diodes
Ratings and Characteristic Curves (TA = 25C unless otherwise noted)


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